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CSD18534Q5A Logic Level Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET

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CSD18534Q5A Logic Level Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET

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Brand Name :Ti
Model Number :CSD18534Q5A
MOQ :Contact us
Price :Contact us
Payment Terms :Paypal, Western Union, TT
Supply Ability :50000 Pieces per Day
Delivery Time :The goods will be shipped within 3 days once received fund
Packaging Details :VSONP8
Description :MOSFET N-CH 60V 13A/50A 8VSON
Channel Mode :Enhancement
Configuration :Single
Minimum Operating Temperature :- 55 C
Maximum Operating Temperature :+ 150 C
Packaging :Cut Tape
Brand :Texas Instruments
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CSD18534Q5A Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance

  • Avalanche Rated

  • Logic Level

  • Pb Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 5 mm × 6 mm Plastic Package

2 Applications

  • DC-DC Conversion

  • Secondary Side Synchronous Rectifier

  • Isolated Converter Primary Side Switch

  • Motor Control

3 Description

This 7.8 mΩ, 60 V, SON 5 × 6 mm NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

60

V

Qg

Gate charge total (10 V)

17

nC

Qgd

Gate charge gate-to-drain

3.5

nC

RDS(on)

Drain-to-source on-resistance

VGS = 4.5 V

9.9

VGS =10V

7.8

VGS(th)

Threshold voltage

1.9

V

Ordering Information

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD18534Q5A

2500

13-Inch Reel

SON 5 mm × 6 mm Plastic Package

Tape and Reel

CSD18534Q5AT

250

7-Inch Reel

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

60

V

VGS

Gate-to-source voltage

±20

V

ID

Continuous drain current (package limited)

50

A

Continuous drain current (silicon limited), TC = 25°C

69

Continuous drain current, TA = 25°C(1)

13

IDM

Pulsed drain current, TA = 25°C(2)

229

A

PD

Power dissipation(1)

3.1

W

Power dissipation, TC = 25°C

77

TJ, Tstg

Operating junction, Storage temperature

–55 to 150

°C

EAS

Avalanche energy, single pulse ID =40A,L=0.1mH,RG =25Ω

80

mJ

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