ChongMing Group (HK) Int'l Co., Ltd

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CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm

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Country/Region:china
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CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm

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Brand Name :Ti
Model Number :CSD13202Q2
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Price :Contact us
Payment Terms :Paypal, Western Union, TT
Supply Ability :50000 Pieces per Day
Delivery Time :The goods will be shipped within 3 days once received fund
Packaging Details :WSON-6
Vgs - Gate-Source Voltage :4.5 V
Vgs th - Gate-Source Threshold Voltage :580 mV
Rds On - Drain-Source Resistance :9.3 mOhms
Id - Continuous Drain Current :14.4 A
Vds - Drain-Source Breakdown Voltage :12 V
Qg - Gate Charge :5.1 nC
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CSD13202Q2 Mosfet Power Transistor Clock MOSFET N-CH Power MOSFET 12V 9.3mohm

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance

  • Avalanche Rated

  • Lead-Free Terminal Plating

  • RoHS Compliant

  • Halogen Free

  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • Optimized for Load Switch Applications

  • Storage, Tablets, and Handheld Devices

  • Optimized for Control FET Applications

  • Point of Load Synchronous Buck Converters

3 Description

This 12-V, 7.5-mΩ NexFETTM power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package.

Product Summary

TA = 25°C

TYPICAL VAUE

UNIT

VDS

Drain-to-Source Voltage

12

V

Qg

Gate Charge Total (4.5 V)

5.1

nC

Qgd

Gate Charge Gate-to-Drain

0.76

nC

RDS(on)

Drain-to-Source On-Resistance

VGS = 2.5 V

9.1

VGS = 4.5 V

7.5

VGS(th)

Threshold Voltage

0.8

V

Device Information

DEVICE

MEDIA

QTY

PACKAGE

SHIP

CSD13202Q2

7-Inch Reel

3000

SON 2.00-mm × 2.00-mm Plastic Package

Tape and Reel

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

12

V

VGS

Gate-to-Source Voltage

±8

V

ID

Continuous Drain Current (Package Limit)

22

A

Continuous Drain Current(1)

14.4

IDM

Pulsed Drain Current, TA = 25°C(2)

76

A

PD

Power Dissipation(1)

2.7

W

TJ, TSTG

Operating Junction, Storage Temperature

–55 to 150

°C

EAS

Avalanche Energy, Single Pulse ID =20A,L=0.1mH,RG =25Ω

20

mJ

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