ChongMing Group (HK) Int'l Co., Ltd

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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893

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Model Number :2N1893
Certification :new & original
Place of Origin :original factory
MOQ :100pcs
Price :Negotiate
Payment Terms :T/T, Western Union,Paypal
Supply Ability :8000
Delivery Time :1 day
Packaging Details :Please contact me for details.
Description :Bipolar (BJT) Transistor NPN 80 V 500 mA 800 mW Through Hole TO-5AA
Collector Current :0.5 mA
Collector-Base Voltage :120
Fast Switching :30 nS
Meets :MIL-S-19500/182
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New / Original NPN BIPOLAR Power Mosfet Transistor 120 Volts 0.5 Amps 2N1893
Maximum Ratings

RATING SYMBOL MAX.

UNIT

Collector-Emitter VoltageVCEO80Vdc
Collector-Emitter VoltageVCER100Vdc
Collector-Base VoltageVCBO120Vdc
Emitter-Base VoltageVEBO7.0Vdc
Collector Current - ContinuousIC0.5Adc
Total Device Dissipation @ T A = 25oC Derate above 25oCPD

0.8
4.57

Watt mW/oC
Total Device Dissipation @ T C = 25oC Derate above 25oCPD

3.0
17.2

Watt mW/oC
Operating Temperature RangeTJ-55 to +200oC
Storage Temperature RangeTS-55 to +200oC
Thermal Resistance, Junction to AmbientRqJA219oC/W
Thermal Resistance, Junction to CaseRqJA58oC/W


Mechanical Outline

Electrical Parameters (TA @ 25°C unless otherwise specified)
CHARACTERISTICSSYMBOLMIN.TYP.MAX.UNIT
Off Characteristics
Collector-Emitter Breakdown Voltage (I C = 100 mAdc, RBE = 10 ohms)(1)BVCER100 --
Collector-Emitter Sustaining Voltage(1) (I C = 30 mAdc, IB = 0)(1)BVCEO 80 --
Collector-Base Breakdown Voltage (I C = 100 mAdc, IE = 0)BV(BR)CBO120 --Vdc
Emitter-Base Breakdown Voltage (IE = 100 mAdc, IC = 0)BV(BR)CBO7.0 --
Collector Cutoff Current (V CB = 90 Vdc, IE = 0) (V CB = 90 Vdc, IE = 0, TA = 150o C)ICBO

--
--

0.01
15

mAdc
Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)IEBO

--

0.01mAdc
On Characteristics
D.C. Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (I C = 10mAdc, VCE = 10 Vdc)(1) (I C = 10mAdc, VCE = 10 Vdc, TA = -55o C)(1) (I C = 150mAdc, VCE = 10 Vdc)(1)hFE

20
35
20
40

--
--
--
120

--
Collector-Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 0.5Vdc
Base-Emitter Saturation Voltage(1) ( Ic = 150 mAdc, IB = 15 mAdc)VCE(Sat)-- 1.3Vdc
Magnitude of small signal short-circuit forward current ratio (I C = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)/hfe/3 10
Output Capacitance (V CB = 10 Vdc, IE = 0, f = 1.0 MHz)COBO5 15pF
Input Impedance = (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0kHz)hib4.0 8.0Ohms
Voltage Feedback Ratio (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hrb-- 1.5X 10-4
Small-Signal Current Gain (I c = 1.0 mAdc, VcB = 5.0Vdc, f = 1.0 kHz) (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hfe

35
45

100
--

--
Output Admittance (I C = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz)hob

--
--

0.5mmho
Pulse response (Vcc = 20Vdc, Ic = 500mAdc)ton + tof-- 30ns


(1) Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%.



















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