ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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BTA08-600CWRG Power Mosfet Transistor Triacs Sensitive Gate 8A TRIACS

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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BTA08-600CWRG Power Mosfet Transistor Triacs Sensitive Gate 8A TRIACS

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Model Number :BTA08-600C
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7900pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :TRIAC Alternistor - Snubberless 600 V 8 A Through Hole TO-220
RMS on-state current (full sine wave) :8 A
I² t Value for fusing :36 A² s
Peak gate current :4 A
Average gate power dissipation :1 W
Storage junction temperature range :- 40 to + 150°C
Operating junction temperature range :- 40 to + 125 °C
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BTA/BTB08 and T8 Series

SNUBBERLESS™, LOGIC LEVEL & STANDARD 8A TRIACS

MAIN FEATURES:

Symbol Value Unit
IT(RMS) 8 A
VDRM/VRRM 600 and 800 V
IGT (Q1) 5 to 50 mA

DESCRIPTION

Available either in through-hole or surface-mount packages, the BTA/BTB08 and T8 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,...

The snubberless versions (BTA/BTB...W and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734)

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave)

DPAK / D² PAK

IPAK / TO-220AB

Tc = 110°C 8 A
TO-220AB Ins. Tc = 100°C
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 80 A
F = 60 Hz t = 16.7 ms 84
I ² t I² t Value for fusing tp = 10 ms 36 A² s
dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

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