ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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TYN1012RG Power Mosfet Transistor SENSITIVE & STANDARD (12A SCRs)

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Model Number :TYN1012RG
Certification :new & original
Place of Origin :original factory
MOQ :20 pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10000 pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :SCR 1 kV 12 A Standard Recovery Through Hole TO-220
RMS on-state current (180° conduction angle) :12 A
Average on-state current (180° conduction angle) :8 A
Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns :50 A/µs
Peak gate current :4 A
Average gate power dissipation :1 W
Operating junction temperature :- 40 to + 125 °C
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View Product Description

TN12, TS12 and TYNx12 Series

SENSITIVE & STANDARD 12A SCRS

Main Features

Symbol Value Unit
IT(RMS) 12 A
VDRM/VRRM 600 to 1000 V
IGT 0.2 to 15 mA

DESCRIPTION

Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits...

Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

Absolute Ratings (limiting values)

Symbol Parameter Value Unit

TN12-G

TYN12

TN12-B/H

TS12-B/H

IT(RMS) RMS on-state current (180° conduction angle) Tc = 105°C 12 A
IT(AV) Average on-state current (180° conduction angle) Tc = 105°C 8 A
ITSM Non repetitive surge peak onstate current tp = 8.3 ms Tj = 25°C 145 115 A
tp = 10 ms 140 110
I ² t I² t Value for fusing tp = 10 ms Tj = 25°C 98 60 A2S
dI/dt

Critical rate of rise of on-state

current IG = 2 x IGT , tr ≤ 100 ns

F = 60 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C
VRGM Maximum peak reverse gate voltage (for TN12 & TYN12 only) 5 V

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