ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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2N2222A Power Mosfet Transistor NPN switching transistors HIGH SPEED SWITCHES

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Model Number :2N2222A
Certification :new & original
Place of Origin :original factory
MOQ :100pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :20000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 500 mW Through Hole TO-18
collector-base voltage :75 V
collector-emitter voltage :40 V
emitter-base voltage :6 V
collector current (DC) :800 mA
peak collector current :800 mA
operating ambient temperature :−65 to +150 °C
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NPN switching transistors 2N2222; 2N2222A

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Linear amplification and switching.

DESCRIPTION

NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A.

PINNING

PIN DESCRIPTION
1 emitter
2 base
3 collector, connected to case

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO

collector-base voltage

2N2222

2N2222A

open emitter

-

-

60

75

V

V

VCEO

collector-emitter voltage

2N2222

2N2222A

open base

-

-

30

40

V

V

VEBO

emitter-base voltage

2N2222

2N2222A

open collector

-

-

5

6

V

V

IC collector current (DC) - 800 mA
ICM peak collector current - 800 mA
IBM peak base current - 200 mA
Ptot total power dissipation Tamb ≤ 25 °C - 500 mW
Tcase ≤ 25 °C - 1.2 W
Tstg storage temperature -65 +150 °C
Tj junction temperature - 200 °C
Tamb operating ambient temperature -65 +150 °C

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