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HiPerFETTM Power MOSFETs Q-CLASS
Single MOSFET Die
IXFK 27N80Q
IXFR 27N80Q
IXFX 27N80Q
VDSS = 800 V
ID25 = 27 A
RDS(on) = 300 m
trr ≤ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load switching (UIS) rated
• Molding epoxies meet UL 94 V-0 flammability classification
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247TM package for clip or spring mounting
• Space savings
• High power density
Maximum Ratings
| Symbol | Test Conditions | Max | Unit |
|---|---|---|---|
| VDSS | TJ = 25℃ to 150℃ | 800 | V |
| VDGR | TJ = 25℃ to 150℃; RGS = 1 M | 800 | V |
| VGS | Continuous | ±20 | V |
| VGSM | Transient | ±30 | V |
| ID25 | TC = 25℃ | 27 | A |
| IDM | TC = 25℃, pulse width limited by TJM | 108 | A |
| IAR | TC = 25℃ | 27 | A |
| EAR | TC = 25℃ | 60 | mJ |
| EAS | TC = 25℃ | 2.5 | J |
| dv/dt |
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 150℃, RG = 2 Ω |
5 | V/ns |
| PD | TC = 25℃ | 500 | W |
| TJ | -55 ... +150 | ℃ | |
| TJM | 150 | ℃ | |
| Tstg | -55 ... +150 | ℃ | |
| TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | ℃ |
| Md | Mounting torque TO-264 | 0.4/6 | Nm/lb.in. |
| Weight |
PLUS 247/ISOPLUS 247 TO-264 |
6 10 |
g g |
Stock Offer (Hot Sell)
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