ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

Manufacturer from China
Active Member
3 Years
Home / Products / Electronic IC Chips /

BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Contact Now
ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
Contact Now

BT151-500R N Channel MOS FET NPN Epitaxial Silicon Transistor 3 Pin Transistor Thyristors

Ask Latest Price
Video Channel
Model Number :BT151-500R
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8200pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Thermal resistance junction to ambient :60 K/W
Average on-state current :7.5 A
RMS on-state current :12 A
Non-repetitive peak on-state current :100 A
Storage temperature :-40 to 150 ˚C
Operating junction temperature :125 ˚C
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description


Thyristors
BT151 series

GENERAL DESCRIPTION
Glasspassivated thyristors ina plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching.

PINNING - TO220AB PIN CONFIGURATION SYMBOL


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
VDRM, VRRMRepetitive peak off-state voltages -

-500R

5001

-650R

6501

-800R

800

V
IT(AV)Average on-state currenthalf sine wave; Tmb ≤ 109 ˚C-7.5A
IT(RMS)RMS on-state currentall conduction angles-12A
ITSMNon-repetitive peak on-state currenthalf sine wave; Tj = 25 ˚C prior to surge-
I2 tI2 t for fusing

t = 10 ms

t = 8.3 ms

t = 10 ms

-

100

110

50

A

A

A2 s

dIT/dtRepetitive rate of rise of on-state current after triggering

ITM = 20 A; IG = 50 mA;

dIG/dt = 50 mA/µs

-50A/µs
IGMPeak gate current -2A
VGMPeak gate voltage -5V
VRGMPeak reverse gate voltage -5V
PGMPeak gate power -5W
PG(AV)Average gate powerover any 20 ms period-0.5W
TstgStorage temperature -40150˚C
Tj Operating junction temperature -125˚C


MECHANICAL DATA

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".


Stock Offer (Hot Sell)

Part NO.Q'tyMFGD/CPackage
MC68HC908GR8CDW4221FREESCALE14+SOP
LM340S-124220NSC15+TO-263
L49604220ST08+TO220-5
LTC2298IUP4219LINEAR07+QFN
LM3524N4214NSC14+DIP-14
LPC1857FET256421115+LBGA256
LNK364PN4211POWER15+DIP-7
LM350T4210NSC15+TO-220
ATMEGA16A-AU4210ATMEL15+QFP44
MPXH6400AC6T14202FREESCALE15+SSOP
MAR97464200ST13+SSOP
LTC1386CS#TRPBF4198LINEAR12+SOP
PIC12F1840-I/SN4196MICROCHIP14+SOP
MMA8452QR14194FREESCALE12+QFN
ADV7391BCPZ4194AD14+LFCSP-32
AD9238BSTZ-654192AD15+QFP64
AD9514BCPZ4192AD14+LFCSP32
ADA4528-2ARMZ4192AD14+MSOP-8
ADXL250AQC4192AD14+SOP-14
AM186ER-40KC4192AMD12+QFP100
ALC888S-GR4191REALTEK08+QFP48




























Inquiry Cart 0