ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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MOSFETs Silicon N-Channel MOS (DTMOS)
TK10P60W
Applications
• Switching Voltage Regulators
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-source voltage | VDSS | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current (DC) (Note 1) | ID | 9.7 | A |
| Drain current (pulsed) (Note 1) | IDP | 38.8 | A |
| Power dissipation (Tc = 25℃) | PD | 80 | W |
| Single-pulse avalanche energy (Note 2) | EAS | 121 | mJ |
| Avalanche current | IAR | 2.5 | A |
| Reverse drain current (DC) (Note 1) | IDR | 9.7 | A |
| Reverse drain current (pulsed) (Note 1) | IDRP | 38.8 | A |
| Channel temperature | Tch | 150 | ℃ |
| Storage temperature | Tstg | -55 to 150 | ℃ |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note
1: Ensure that the channel temperature does not exceed 150℃. Note
2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A
Stock Offer (Hot Sell)
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