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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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STGB7NC60HDT4 Power Mosfet Transistor Very Fast Power MESH IGBT

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Model Number :STGB7NC60HDT4
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7800pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :IGBT 600 V 25 A 80 W Surface Mount D2PAK
Collector-Emitter Voltage :600 V
Emitter-Collector Voltage :20 V
Gate-Emitter Voltage :±20 V
Collector Current (pulsed) :50 A
Diode RMS Forward Current at TC = 25°C :20 A
Storage Temperature :– 55 to 150 °C
Operating Junction Temperature :– 55 to 150 °C
Total Dissipation at TC = 25°C :80 W
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STGP7NC60HD

STGF7NC60HD - STGB7NC60HD

N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK

Very Fast PowerMESH™ IGBT

■ LOWER ON-VOLTAGE DROP (Vcesat)

■ OFF LOSSES INCLUDE TAIL CURRENT

■ LOSSES INCLUDE DIODE RECOVERY ENERGY

■ LOWER CRES/CIES RATIO

■ HIGH FREQUENCY OPERATION UP TO 70 KHz

■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE

■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION

DESCRIPTION

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.

APPLICATIONS

■ HIGH FREQUENCY INVERTERS

■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES

■ MOTOR DRIVERS

Absolute Maximum ratings

Symbol Parameter Value Unit

STGP7NC60HD

STGB7NC60HD

STGF7NC60HD
VCES Collector-Emitter Voltage (VGS = 0) 600 V
VECR Emitter-Collector Voltage 20 V
VGE Gate-Emitter Voltage ±20 V
IC Collector Current (continuous) at TC = 25°C (#) 25 10 A
IC Collector Current (continuous) at TC = 100°C (#) 14 6 A
ICM (1) Collector Current (pulsed) 50 A
IF Diode RMS Forward Current at TC = 25°C 20 A
PTOT Total Dissipation at TC = 25°C 80 25 W
Derating Factor 0.64 0.20 W/°C
VISO

Insulation Withstand Voltage A.C.

(t = 1 sec; Tc = 25°C)

- 2500 V
Tstg Storage Temperature – 55 to 150 °C
Tj Operating Junction Temperature

(1) Pulse width limited by max. junction temperature.

Figure 1: Package

Figure 2: Internal Schematic Diagram

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