ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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| Part No. | Quantity | Brand | D/C | Package |
| MAX191BCWG+ | 2338 | MAXIM | 16+ | SOIC-24 |
| MAX1932ETC+T | 3044 | MAXIM | 13+ | QFN |
| MAX232EIDR | 50000 | TI | 13+ | SOP-16 |
| MAX232IDW | 9003 | TI | 11+ | SOP-16 |
| MAX253CSA+ | 6562 | MAXIM | 14+ | SOP-8 |
| MAX3051EKA+T | 3853 | MAXIM | 14+ | SOT-23 |
| MAX3061EEKA | 4024 | MAXIM | 15+ | SOT23-8 |
| MAX3070EESD | 5557 | MAXIM | 16+ | SOP-14 |
| MAX31865ATP+T | 3707 | MAXIM | 16+ | QFN20 |
| MAX3221ECPWR | 3059 | TI | 16+ | TSSOP |
| MAX3224ECAP | 4095 | MAXIM | 16+ | SSOP-20 |
| MAX3232CPWR | 5697 | TI | 16+ | TSSOP |
| MAX3232CUE | 3986 | MAXIM | 16+ | TSSOP |
| MAX3232EIDR | 3667 | TI | 16+ | SOP-16 |
| MAX3238ECPWR | 8331 | TI | 10+ | TSSOP |
| MAX3243CDBR | 3590 | TI | 14+ | SSOP-28 |
| MAX3243ECDBR | 6741 | TI | 09+ | SSOP-28 |
| MAX32590-LNJ+ | 553 | MAXIM | 13+ | NA |
| MAX3311CUB | 2302 | MAXIM | 16+ | MSOP-10 |
| MAX3311EEUB | 2324 | MAXIM | 16+ | MSOP-10 |
| MAX3442EEPA+ | 3095 | MAXIM | 16+ | DIP-8 |
| MAX3442EESA+T | 5829 | MAXIM | 16+ | SOP-8 |
| MAX3486CSA | 15889 | MAXIM | 16+ | SOP-8 |
| MAX3490CSA+ | 11077 | MAXIM | 13+ | SOP-8 |
| MAX4080SASA+T | 15089 | MAXIM | 16+ | SOP-8 |
| MAX418CPD | 3034 | MAXIM | 14+ | DIP-14 |
| MAX4624EZT | 15171 | MAXIM | 16+ | SOT23-6 |
| MAX4663CAE | 2151 | MAXIM | 16+ | SSOP-16 |
| MAX472CPA | 4115 | MAXIM | 15+ | DIP-8 |
| MAX491CPD+ | 14840 | MAXIM | 16+ | DIP-14 |
STP4NK60Z-STP4NK60ZFP-STB4NK60Z-1
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL600V-1.76Ω-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
|
STP4NK60Z STB4NK60Z STB4NK60Z-1 |
STP4NK60ZFP |
STD4NK60Z STD4NK60Z-1 |
|||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 | A |
| ID | Drain Current (continuous) at TC = 100°C | 2.5 | 2.5 (*) | 2.5 | A |
| IDM (•) | Drain Current (pulsed) | 16 | 16 (*) | 16 | A |
| PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
| Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
|
Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
°C | ||
(•) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed