ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor

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Model Number :BFG135
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :6800pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Description :RF Transistor NPN 15V 150mA 7GHz 1W Surface Mount SC-73
collector-base voltage :25 V
collector-emitter voltage :15 V
emitter-base voltage :2 V
DC collector current :150 mA
total power dissipation :1 W
storage temperature :−65 to 150 °C
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BFG135

NPN 7GHz wideband transistor

DESCRIPTION

NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level.

The distribution of the active areas across the surface of the device gives an excellent temperature profile.

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 25 V
VCEO collector-emitter voltage open base - 15 V
VEBO emitter-base voltage open collector - 2 V
IC DC collector current - 150 mA
Ptot total power dissipation up to Ts = 145 °C (note 1) - 1 W
Tstg storage temperature -65 155 °C
Tj junction temperature - 175 °C

Note 1. Ts is the temperature at the soldering point of the collector tab.

PINNING

PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector

Intermodulation distortion and second order intermodulation distortion test circuit.

Stock Offer (Hot Sell)

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