ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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STP4NK60Z - STP4NK60ZFP
STB4NK60Z-STD4NK60Z-STD4NK60Z-1
N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK
Zener-Protected SuperMESHTMPower MOSFET
■ TYPICAL RDS(on) = 1.76 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC CAPACITANCES
■ VERY GOOD MANUFACTURING REPEATIBILITY
DESCRIPTION
The SuperMESHTM series is obtained through an extreme optimization of ST’s well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
■ LIGHTING
ABSOLUTE MAXIMUM RATINGS
| Symbol | Parameter | Value | Unit | ||
| STP4NK60Z STB4NK60Z | STP4NK60ZFP | STD4NK60Z STD4NK60Z-1 | |||
| VDS | Drain-source Voltage (VGS = 0) | 600 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 kΩ) | 600 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 4 | 4 (*) | 4 | A |
| ID | Drain Current (continuous) at TC = 100°C | 2.5 | 2.5 (*) | 2.5 | A |
| IDM (l ) | Drain Current (pulsed) | 16 | 16 (*) | 16 | A |
| PTOT | Total Dissipation at TC = 25°C | 70 | 25 | 70 | W |
| Derating Factor | 0.56 | 0.2 | 0.56 | W/°C | |
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5KΩ) | 3000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| VISO | Insulation Withstand Voltage (DC) | - | 2500 | - | V |
Tj Tstg | Operating Junction Temperature Storage Temperature | -55 to 150 -55 to 150 | °C °C | ||
(l ) Pulse width limited by safe operating area
(1) ISD ≤4A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Stock Offer (Hot Sell)
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