ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16

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City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16

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Brand Name :STMICROELECTRONICS
Model Number :BTA16-600BRG
Certification :Original Factory Pack
Place of Origin :Morocco
MOQ :100pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :6000PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Description :TRIAC Standard 600 V 16 A Through Hole TO-220
RMS on-state current :16 A
Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) :168 A
Non repetitive surge peak off-state voltage :VDRM/VRRM + 100 V
Collector current :150 mA
Critical rate of rise of on-state current :50 A/µs
Peak gate current :4 A
Average gate power dissipation :1 W
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High Voltage Power Mosfet Transistor BTA16-600BRG 16A TRIACS BTA / BTB 16

DESCRIPTION

Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...

The snubberless versions (BTA/BTB...W and T16 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734).

Symbol Value Unit
IT(RMS) 16 A
VDRM/VRRM 600, 700 and 800 V
IGT (Q1) 10 to 50 mA

ORDERING INFORMATION

Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle).

Fig. 2-1: RMS on-state current versus case temperature (full cycle).

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