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ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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China 1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component wholesale
  • China 1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component wholesale

1N5358B Silicon Power Zener Diodes Circuit Board Chips Electronic Component
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Brand Name :SST
Model Number :SST25VF016B-50-4I-S2AF
Certification :Original
Place of Origin :Original
MOQ :5 PCS
Price :0.1USD
Payment Terms :T/T, Western Union,Paypal
Supply Ability :10000PCS/DAY
Delivery Time :1 day
Packaging Details :contact us for more details
Description :Zener Diode 22 V 5 W ±5% Through Hole DO-201
Maximum power dissipation :5W
Nominal Z-voltage :8.7...200 V
Plastic case :DO-201
Weight approx :0.8 g
tolerance :±5%
Type :Diodes
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View Product Description
1N5358B Silicon-Power-Zener Diodes
Silicon-Power-Zener Diodes (non-planar technology)
Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage Nominale Z-Spannung
Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack
Standard Zener voltage tolerance is ±5%). Other voltage tolerances and higher Zener voltages on request.
Die Toleranz der Zener-Spannung ist in der Standard-Ausführung ±5%. Andere Toleranzen oder höhere
Arbeitsspannungen auf Anfrage.
Power dissipation Verlustleistung
Ptot
5 W 1)
Non repetitive peak power dissipation, t < 10 ms
Einmalige Impuls-Verlustleistung, t < 10 ms
PZSM
80 W
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 25 K/W 1)
Thermal resistance junction to terminal
Wärmewiderstand Sperrschicht – Anschluss
 RthL <8 K/W

Product Tags:

silicon diode 1n4001

semiconductor integrated circuit

datasheet 7 segment common anode
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