ChongMing Group (HK) Int'l Co., Ltd

CHONGMING GROUP (HK) INT'L CO., LTD.

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HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS21091STRPBF

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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HALF bridge rectifier diode DRIVER , bridge rectifier circuit IRS21091STRPBF

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Brand Name :IRF
Model Number :IRS2109
Certification :Original Factory Pack
Place of Origin :Japan
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Description :Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
High-side floating absolute voltage :-0.3 625
High-side floating supply offset voltage :VB - 25 VB + 0.3
High-side floating output voltage :VS - 0.3 VB + 0.3
Low-side and logic fixed supply voltage :-0.3 25
Low-side output voltage :-0.3 VCC + 0.3
Programmable deadtime and shutdown pin voltage :VSS - 0.3 VCC + 0.3
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IRS21091(S)PbF

HALF-BRIDGE DRIVER

Features

· Floating channel designed for bootstrap operation

· Fully operational to +600 V

· Tolerant to negative transient voltage, dV/dt immune

· Gate drive supply range from 10 V to 20 V

· Undervoltage lockout for both channels

· 3.3 V, 5 V, and 15 V input logic compatible

· Cross-conduction prevention logic

· Matched propagation delay for both channels

· High-side output in phase with IN input

· Logic and power ground +/- 5 V offset

· Internal 500 ns deadtime,

and programmable up to 5 µs with one external RDT resistor

· Lower di/dt gate driver for better noise immunity

· The dual function DT/SD input turns off both channels

· RoHS compliant

Description

The IRS21091 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Typical Connection

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