PIC12F675-IP# 8-Pin Flash-Based 8-Bit IC CMOS Microcontrollers NEW ORIGINAL
Low-Power Features:
• Standby Current:
- 1 nA @ 2.0V, typical
• Operating Current:
- 8.5 A @ 32 kHz, 2.0V, typical
- 100 A @ 1 MHz, 2.0V, typical
• Watchdog Timer Current
- 300 nA @ 2.0V, typical
• Timer1 Oscillator Current:
- 4 A @ 32 kHz, 2.0V, typical
Peripheral Features:
• 6 I/O Pins with Individual Direction Control
• High Current Sink/Source for Direct LED Drive
• Analog Comparator module with:
- One analog comparator
- Programmable on-chip comparator voltage reference (CVREF) module
- Programmable input multiplexing from device inputs
- Comparator output is externally accessible
• Analog-to-Digital Converter module (PIC12F675):
- 10-bit resolution
- Programmable 4-channel input
- Voltage reference input
• Timer0: 8-Bit Timer/Counter with 8-Bit
Programmable Prescaler
• Enhanced Timer1:
- 16-bit timer/counter with prescaler
- External Gate Input mode
- Option to use OSC1 and OSC2 in LP mode as Timer1 oscillator, if INTOSC mode selected
• In-Circuit Serial ProgrammiCM GROUPM (ICSPTM) via two pins
High-Performance RISC CPU:
• Only 35 Instructions to Learn
- All single-cycle instructions except branches
• Operating Speed:
- DC – 20 MHz oscillator/clock input
- DC – 200 ns instruction cycle
• Interrupt Capability
• 8-Level Deep Hardware Stack
• Direct, Indirect, and Relative Addressing modes
Special Microcontroller Features:
• Internal and External Oscillator Options
- Precision Internal 4 MHz oscillator factory calibrated to ±1%
- External Oscillator support for crystals and resonators
- 5 s wake-up from Sleep, 3.0V, typical
• Power-Saving Sleep mode
• Wide Operating Voltage Range – 2.0V to 5.5V
• Industrial and Extended Temperature Range
• Low-Power Power-on Reset (POR)
• Power-up Timer (PWRT) and Oscillator Start-up Timer (OST)
• Brown-out Detect (BOD)
• Watchdog Timer (WDT) with Independent Oscillator for Reliable Operation
• Multiplexed MCLR/Input Pin
• Interrupt-on-Pin Change
• Individual Programmable Weak Pull-ups
• Programmable Code Protection
• High Endurance Flash/EEPROM Cell
- 100,000 write Flash endurance
- 1,000,000 write EEPROM endurance
- Flash/Data EEPROM Retention: > 40 years
