ChongMing Group (HK) Int'l Co., Ltd

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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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IR2011S 35ns Low Side Driver , High Speed Power Mosfet Driver 10V - 20V

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Brand Name :IR
Model Number :IR2011STRPBF
Place of Origin :THAILAND
MOQ :10PCS
Price :Negotiation
Payment Terms :T/T, Western Union , ESCROW
Supply Ability :50000PCS
Delivery Time :STOCK
Packaging Details :2500PCS/REEL
Description :High-Side or Low-Side Gate Driver IC Inverting 8-SOIC
Driven Configuration :Half-Bridge
Number of Drivers :2
Gate Type :N-Channel MOSFET
Voltage - Supply :10 V ~ 20 V
Logic Voltage - VIL, VIH :0.7V, 2.2V
Current - Peak Output :1A, 1A
High Side Voltage :200V
Rise / Fall Time (Typ) :35ns, 20ns
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IR2011STRPBF Computer IC Chip HIGH AND LOW SIDE DRIVER high speed powerMOSFET driver

Features

·Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune

·Gate drive supply range from 10V to 20V

·Independent low and high side channels

·Input logicHIN/LIN active high

·Undervoltage lockout for both channels

·3.3V and 5V input logic compatible

·CMOS Schmitt-triggered inputs with pull-down

·Matched propagation delay for both channels ·Also available LEAD-FREE (PbF)

Applications

·Audio Class D amplifiers ·High power DC-DC SMPS converters

·Other high frequency applications

Description

The IR2011 isa high power, high speed powerMOSFET driver with independenthigh and low side referenced output channels, idealforAudio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction.

Product Attributes Select All
Categories Integrated Circuits (ICs)
Series -
Packaging Tape & Reel (TR)
Part Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 10 V ~ 20 V
Logic Voltage - VIL, VIH 0.7V, 2.2V
Current - Peak Output (Source, Sink) 1A, 1A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 35ns, 20ns
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Part Number IR2011SPBF

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