ChongMing Group (HK) Int'l Co., Ltd

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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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ChongMing Group (HK) Int'l Co., Ltd
City:shenzhen
Country/Region:china
Contact Person:MsDoris Guo
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IGBT 600V 22A 156W Insulated Gate Bipolar Transistor IRGB10B60KDPBF

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Brand Name :INFINEON/IR
Model Number :IRGB10B60KDPBF
Certification :CE/ RoHS
Place of Origin :Germany
MOQ :5-10pcs
Price :To be negotiated
Payment Terms :T/T, Western Union,paypal
Supply Ability :10,000PCS
Delivery Time :in stock 2-3days
Packaging Details :Tube
Description :IGBT NPT 600 V 22 A 156 W Through Hole TO-220AB
PN :IRGB10B60KDPBF
Brand :INFINEON/IR
Original :Germany
Type :Insulated Gate Bipolar Transistor Ultrafast Soft Recovery Diode
Voltage :IGBT 600V 22A 156W
Package :TO220AB
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IRGB10B60KDPBF # Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode IGBT

600V 22A 156W TO220AB

Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Part Number IRGB10B60KDPBF
Manufacturer Infineon
Categories Discrete Semiconductor Products Transistors - IGBTs - Single Manufacturer Infineon
Packaging Tube
Original Germany
Part Status Active
IGBT Type NPT
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 22A
Current - Collector Pulsed (Icm) 44A
Vce(on) (Max) @ Vge Ic 2.2V @ 15V 10A
Power - Max 156W
Switching Energy 140µJ (on) 250µJ (off)
Input Type Standard
Gate Charge 38nC

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