DF2B29FUH3F TVS DIODE 24VWM SOD323 47VC ESD Protection Diodes Silicon Epitaxial Planar
1.Applications• ESD Protection
Note:This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2.Features
(1) AEC-Q101 qualified (Note 1)
Note 1:
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Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to ISO10605. (@ C = 330 pF, R = 2 kΩ)
Note 3: According to IEC61000-4-5.
Note 1: Based on IEC61000-4-5 8/20µs pulse.
Note 2: TLP parameter: Z0 = 50Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using a least-squares fit of TLP characteristics at IPP between 8 A to 16 A.
Note 3: Guaranteed by design.
