2SD1899 NPN PNP Transistors Silicon NPN PowerTransistor
DESCRIPTION
·Low collector saturation voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·High transition frequency applications
Specifications
Category: BJT - General Purpose
Manufacturer: RENESAS TECHNOLOGY
Collector Current (DC) : 3(A)
Collector-Base Voltage: 60(V)
Collector-Emitter Voltage: 60(V)
Emitter-Base Voltage: 7(V)
Frequency: 120(MHz)
Power Dissipation: 2(W)
Mounting: Surface Mount
Operating Temp Range: -55C to 150C
Package Type: TO-252
Pin Count: 2 +Tab
Number of Elements: 1
Operating Temperature Classification: Military
Category : Bipolar Power
Rad Hardened: No
Transistor Polarity: NPN
Output Power: Not Required(W)
Configuration: Single
DC Current Gain: 60@0.2A@2V/50@2A@2V
