ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount
P-channel enhancement mode BSH201 MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
The BSH201 is supplied in the SOT23 subminiature surface mounting package.
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Nexperia USA Inc. |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 160mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 1mA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 48V |
| FET Feature | - |
| Power Dissipation (Max) | 417mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |