IRFB4227PB PDP Switch Advanced Process Technology INFINEON Germany
Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Class-D Audio Amplifier 300W-500W (Half-bridge)
Description
This HEXFET⑧Power MOSFET is specifically designed for Sustain;
Energy Recovery & Pass switch applications in Plasma Display Panels.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area
and low EpuL sE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability.
These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
